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HYG025N04LQ1V

Part Number	HYG025N04LQ1V
Manufacturer	HUAYI
Description	N-Channel MOSFET
Published	Apr 22, 2019
Detailed Description	HYG025N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/150A RDS(ON)= 2.4mΩ(typ.)@VGS = 10V RDS(ON)= 4.2mΩ(t...
Datasheet	HYG025N04LQ1V PDF File

Overview

HYG025N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/150A RDS(ON)= 2.
4mΩ(typ.
)@VGS = 10V RDS(ON)= 4.
2mΩ(typ.
)@VGS = 4.
5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description GDS TO-252-2L GDS GDS TO-251-3L TO-251-3S Applications  Switching Application  Power Management for DC/DC  Battery Protection Ordering and Marking Information N-Channel MOSFET D G025N04 XYMXXXXXX U G025N04 XYMXXXXXX V G025N04 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3L Date Code XYMXXXXXX V:TO-251-3S Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation fin...

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