DatasheetsPDF.com

HMMC-5021 Datasheet PDF

Avago
Part Number HMMC-5021
Manufacturer Avago
Title GaAs MMIC Traveling Wave Amplifiers
Description The HMMC-5021/26 is a broadband GaAs MMIC Traveling Wave Amplifier designed for high gain and moderate output power over the full 2 to 26.5 GHz fr...
Features ...

File Size 110.46KB
Datasheet PDF File HMMC-5021 PDF File


HMMC-5021 HMMC-5021 HMMC-5021




Similar Ai Datasheet

HMMC-5021 : The HMMC-5021/22/26 is a broadband GaAs MMIC Traveling Wave Amplifier designed for high gain and moderate output power over the full 2 to 26.5 GHz frequency range. Seven MESFET cascode stages provide a flat gain response, making the HMMC-5021/22/26 an ideal wideband gain block. Optical l.

HMMC-5021 : The HMMC-5021/22/26 is a broadband GaAs MMIC Traveling Wave Amplifier designed for high gain and moderate output power over the full 2 to 26.5 GHz frequency range. Seven MESFET cascode stages provide a flat gain response, making the HMMC-5021/22/26 an ideal wideband gain block. Optical lithography is used to produce gate lengths of ≈ 0.4 µm. The HMMC-5021/22/26 incorporates advanced MBE technology, Ti-Pt-Au gate metallization, silicon nitride passivation, and polyimide for scratch protection. Chip Size: Chip Size Tolerance: Ch.

HMMC-5021 : The HMMC-5021/22/26/QMMC-5002 is a broadband GaAs MMIC traveling wave amplifier designed for high gain and moderate output power over the full 2 to 26.5 GHz frequency range. Seven MES-FET cascode stages provide a flat gain response, making the HMMC-5021/22/26/QMMC-5002 an ideal wideband gain block. Optical lithography is used to produce gate lengths of ≈ 0.4 μm. The HMMC-5021/22/26/QMMC-50.

HMMC-5022 : The HMMC-5021/22/26 is a broadband GaAs MMIC Traveling Wave Amplifier designed for high gain and moderate output power over the full 2 to 26.5 GHz frequency range. Seven MESFET cascode stages provide a flat gain response, making the HMMC-5021/22/26 an ideal wideband gain block. Optical l.

HMMC-5022 : The HMMC-5021/22/26 is a broadband GaAs MMIC Traveling Wave Amplifier designed for high gain and moderate output power over the full 2 to 26.5 GHz frequency range. Seven MESFET cascode stages provide a flat gain response, making the HMMC-5021/22/26 an ideal wideband gain block. Optical lithography is used to produce gate lengths of ≈ 0.4 µm. The HMMC-5021/22/26 incorporates advanced MBE technology, Ti-Pt-Au gate metallization, silicon nitride passivation, and polyimide for scratch protection. Chip Size: Chip Size Tolerance: Ch.

HMMC-5022 : The HMMC-5021/22/26/QMMC-5002 is a broadband GaAs MMIC traveling wave amplifier designed for high gain and moderate output power over the full 2 to 26.5 GHz frequency range. Seven MES-FET cascode stages provide a flat gain response, making the HMMC-5021/22/26/QMMC-5002 an ideal wideband gain block. Optical lithography is used to produce gate lengths of ≈ 0.4 μm. The HMMC-5021/22/26/QMMC-50.

HMMC-5025 : The HMMC-5025 was designed as a generic wide band distributed amplifier, covering the frequency span 2 - 50 GHz. It consists of seven stages. Each stage is made up of two cascoded FETs with gate peripheries of 48 µm per FET. Both input and output ports were designed to provide 50 Ohm terminations. Bonding pads are provided in the layout to allow amplifier operation at frequencies lower than 2 GHz by means of external circuit components. The amplifier is biased with a single positive drain supply (VDD) and a single negati.

HMMC-5026 : The HMMC-5021/22/26 is a broadband GaAs MMIC Traveling Wave Amplifier designed for high gain and moderate output power over the full 2 to 26.5 GHz frequency range. Seven MESFET cascode stages provide a flat gain response, making the HMMC-5021/22/26 an ideal wideband gain block. Optical l.

HMMC-5026 : The HMMC-5021/26 is a broadband GaAs MMIC Traveling Wave Amplifier designed for high gain and moderate output power over the full 2 to 26.5 GHz frequency range. Seven MESFET cascode stages provide a flat gain response, making the HMMC-5021/26 an ideal wideband gain block. Optical lithography is used to produce gate lengths of ≈0.4 µm. The HMMC-5021/26 incorporates advanced MBE technology, Ti-Pt-Au gate metallization, silicon nitride passivation, and polyimide for scratch protection. Absolute Maximum Ratings[1] Symbol Parameters/Conditions Units Min. Max. VDD IDD VG1 IG1 VG2[2] IG2 PDC Pin Tch Tcase Tstg Tmax Positive Drain Voltage Total Drain Current First Gate Voltage Firs.

HMMC-5026 : The HMMC-5021/22/26 is a broadband GaAs MMIC Traveling Wave Amplifier designed for high gain and moderate output power over the full 2 to 26.5 GHz frequency range. Seven MESFET cascode stages provide a flat gain response, making the HMMC-5021/22/26 an ideal wideband gain block. Optical lithography is used to produce gate lengths of ≈ 0.4 µm. The HMMC-5021/22/26 incorporates advanced MBE technology, Ti-Pt-Au gate metallization, silicon nitride passivation, and polyimide for scratch protection. Chip Size: Chip Size Tolerance: Ch.

HMMC-5026 : The HMMC-5021/22/26/QMMC-5002 is a broadband GaAs MMIC traveling wave amplifier designed for high gain and moderate output power over the full 2 to 26.5 GHz frequency range. Seven MES-FET cascode stages provide a flat gain response, making the HMMC-5021/22/26/QMMC-5002 an ideal wideband gain block. Optical lithography is used to produce gate lengths of ≈ 0.4 μm. The HMMC-5021/22/26/QMMC-50.

HMMC-5027 : The HMMC-5027 is a broadband GaAs MMIC Traveling Wave Amplifier designed for medium output power and moderate gain over the full 2 to 26.5 GHz frequency range. Seven MESFET cascode stages provide a flat gain response, making the HMMC-5027 an ideal wideband power block. Optical lithography is used to produce gate lengths of ≈0.5 µm. The HMMC-5027 incorporates advanced MBE technology, Ti-Pt-Au gate metallization, silicon nitride passivation, and polyimide for scratch protection. 2980 x 770 µm (117.3 x 30.3 mils) ±10 µm (±0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils) 75 x 75 µm (2.95 x 2.95 mils), or larger Absolute Maximum Ratings[1] Features • Wide-frequency range: 2 – 26.5 GHz • Moderate gain: 7 .

HMMC-5032 : The HMMC-5032 is a MMIC power amplifier designed for use in wireless transmitters that operate within the 17.7 GHz to 32 GHz range. It provides 22 dBm of output power and 8 dB of small-signal gain from a small easy-to-use device. The HMMC-5032 was designed to be driven by the HMMC-5040 (20-40 GHz) or the HMMC-5618 (5.9-20 GHz) MMIC amplifier for linear transmit applications. This device has input and output matching circuitry for use in 50 Ω environments. Chip Size: 1370 x 770 μm (53.3 x 30.0 mils) Chip Size Tolerance: ±10 μm (±0.4 mils) Chip Thickness: 127 ± 15 μm (5 ±0.6 mils) Pad Dimensions: 80 × 80 μm (3.2 × 3.2 mils) Absolute Maximum Ratings1 Symbol VD1,2 VG1,2 Det. bias I.

HMMC-5038 : The HMMC-5038 MMIC is a high-gain low-noise amplifier (LNA) designed for communication receivers that operate from 37 GHz to 40 GHz. The gain of this four stage LNA can be adjusted by altering the gate bias of the output two, or three, stages while maintaining optimum noise figure bias for the input stage(s). Large FETs provide high power handling capability to avoid power compression. The backside of the chip is both RF and DC ground. This helps simplify the assembly process and reduce assembly related performance variations and costs. The HMMC-5038 is fabricated using a PHEMT integrated circuit structure that provides good noise and gain performance. Features • Low noise figure: 4.8 dB • .

HMMC-5040 : The HMMC-5040 is a high-gain broadband MMIC amplifier designed for both military applica-tions and commercial communication systems. This four stage amplifier has input and output matching circuitry for use in 50 ohm environments. It is fabricated using a PHEMT integrated circuit structure that provides exceptional broadband performance. The backside of the chip is both RF and DC ground. This helps simplify the assembly process and reduces assembly related performance variations and costs. This MMIC is a cost effective alternative to hybrid (discrete-FET) amplifiers that require complex tuning and assembly processes. Features • Large bandwidth: 20 – 44 GHz typical 21 – 40 GHz specified • Hi.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)