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WFP70N06

Winsemi
Part Number WFP70N06
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Apr 24, 2019
Detailed Description Features ■ 70A,60V, RDS(on)(Max0.014Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 70nC) ■ Low Crss (Typical 160pF) ■ Improv...
Datasheet PDF File WFP70N06 PDF File

WFP70N06
WFP70N06

Overview
Features ■ 70A,60V, RDS(on)(Max0.
014Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 70nC) ■ Low Crss (Typical 160pF) ■ Improved dv/dt capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(175℃) WFP70N06 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Semiwell's advanced planar stripe,DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics,DC-DC Converters and power management in portableand,battery operatedproducts.
Absolute Maximum Ratings Symbol Parameter VDSS Drain Source Voltage Continuous Drain Current(@Tc=25℃) ID Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ,Tstg Junction and Storage Te...


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