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TPH3205ESBET

Part Number	TPH3205ESBET
Manufacturer	Transphorm
Description	650V GaN FET
Published	Apr 29, 2019
Detailed Description	PRELIMINARY TPH3205ESBET 600V GaN FET in TO-268 (source tab) Description The TPH3205ESBET 600V, 49mΩ Gallium Nitride (...
Datasheet	TPH3205ESBET PDF File

Overview

PRELIMINARY TPH3205ESBET 600V GaN FET in TO-268 (source tab) Description The TPH3205ESBET 600V, 49mΩ Gallium Nitride (GaN) FET is a normally-off device.
It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
Related Literature  AN0009: Recommended External Circuitry for GaN FETs  AN0003: Printed Circuit Board Layout and Probing  AN0010: Paralleling GaN FETs Ordering Information Part Number Package TPH3205ESBET TO-268 Package Configuration Source TPH3205ESBET TO-268 (top view) S G D Features  JEDEC-qualified GaN technology  Dynamic RDS(on)eff production tested  Robust design, defined by — Intrinsic lifetime tests — Wide gate safety margin — Transient over-voltage capability  Very low QRR  Reduced crossover loss  RoH...

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TPH3205ESBET 650V GaN FET - Transphorm

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