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TP65H035WS

Transphorm
Part Number TP65H035WS
Manufacturer Transphorm
Description 650V Cascode GaN FET
Published Apr 29, 2019
Detailed Description TP65H035WS 650V GaN FET in TO-247 (source tab) Description The TP65H035WS 650V, 35mΩ Gallium Nitride (GaN) FET is a no...
Datasheet PDF File TP65H035WS PDF File

TP65H035WS
TP65H035WS

Overview
TP65H035WS 650V GaN FET in TO-247 (source tab) Description The TP65H035WS 650V, 35mΩ Gallium Nitride (GaN) FET is a normally-off device.
It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
Related Literature  AN0009: Recommended External Circuitry for GaN FETs  AN0003: Printed Circuit Board Layout and Probing  AN0010: Paralleling GaN FETs Ordering Information Part Number Package TP65H035WS 3 lead TO-247 Package Configuration Source TP65H035WS TO-247 (t...


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