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TPH3206PD

Transphorm
Part Number TPH3206PD
Manufacturer Transphorm
Description 600V GaN FET
Published Apr 29, 2019
Detailed Description 600V GaN FET in TO-220 (drain tab) TPH3206PD Not recommended for new designs—see TPH3206PSB Description The TPH3206PD ...
Datasheet PDF File TPH3206PD PDF File

TPH3206PD
TPH3206PD

Overview
600V GaN FET in TO-220 (drain tab) TPH3206PD Not recommended for new designs—see TPH3206PSB Description The TPH3206PD 600V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device.
It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
Related Literature  AN0009: Recommended External Circuitry for GaN FETs  AN0003: Printed Circuit Board Layout and Probing  AN0010: Paralleling GaN FETs Ordering Information Part Number Package TPH3206PD 3 lead TO-220 Packag...


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