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TP65H150LSG

Transphorm
Part Number TP65H150LSG
Manufacturer Transphorm
Description 650V GaN FET
Published Apr 29, 2019
Detailed Description TP65H150LSG 650V GaN FET PQFN Series Preliminary Description The TP65H150LSG 650V, 150mΩ Gallium Nitride (GaN) FET is...
Datasheet PDF File TP65H150LSG PDF File

TP65H150LSG
TP65H150LSG

Overview
TP65H150LSG 650V GaN FET PQFN Series Preliminary Description The TP65H150LSG 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device.
It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
Related Literature  AN0009: Recommended External Circuitry for GaN FETs  AN0003: Printed Circuit Board Layout and Probing  AN0010: Paralleling GaN FETs Ordering Information Part Number Package TP65H150LSG 8 x 8mm PQFN Package Configuration Source TP65H150LSG 8x8...


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