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MW6S010MR1

NXP
Part Number MW6S010MR1
Manufacturer NXP
Description RF Power Field Effect Transistor
Published Apr 29, 2019
Detailed Description Freescale Semiconductor Technical Data Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with thi...
Datasheet PDF File MW6S010MR1 PDF File

MW6S010MR1
MW6S010MR1

Overview
Freescale Semiconductor Technical Data Replaced by MW6S010NR1/GNR1.
There are no form, fit or function changes with this part replacement.
N suffix indicates RoHS compliant part.
RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz.
Suitable for analog and digital modulation and multicarrier amplifier applications.
• Typical Two - Tone Performance 125 mA, Power PGoauitn=—101W8 daBtts PEP @ 960 MHz, VDD = 28 Volts, IDQ = Drain Efficiency — 32% IMD — - 37 dBc • Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip RF Feedback for Broadband Stability • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • 200°C Capable Plastic Package • In Tape and Reel.
R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
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