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MW6S010GMR1

Part Number	MW6S010GMR1
Manufacturer	NXP
Description	RF Power Field Effect Transistor
Published	Apr 29, 2019
Detailed Description	Freescale Semiconductor Technical Data Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with thi...
Datasheet	MW6S010GMR1 PDF File

Overview

Freescale Semiconductor Technical Data Replaced by MW6S010NR1/GNR1.
There are no form, fit or function changes with this part replacement.
N suffix indicates RoHS compliant part.
RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz.
Suitable for analog and digital modulation and multicarrier amplifier applications.
• Typical Two - Tone Performance 125 mA, Power PGoauitn=—101W8 daBtts PEP @ 960 MHz, VDD = 28 Volts, IDQ = Drain Efficiency — 32% IMD — - 37 dBc • Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power • Characterized with Se...

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MW6S010GMR1 RF Power Field Effect Transistor - NXP

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