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HI3669

Hi-Sincerity Mocroelectronics
Part Number HI3669
Manufacturer Hi-Sincerity Mocroelectronics
Description NPN EPITAXIAL PLANAR TRANSISTOR
Published Apr 30, 2019
Detailed Description HI-SINCERITY MICROELECTRONICS CORP. HI3669 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE9029 Issued Date : 1997.11.14 ...
Datasheet PDF File HI3669 PDF File

HI3669
HI3669

Overview
HI-SINCERITY MICROELECTRONICS CORP.
HI3669 NPN EPITAXIAL PLANAR TRANSISTOR Spec.
No.
: HE9029 Issued Date : 1997.
11.
14 Revised Date : 2006.
02.
20 Page No.
: 1/4 Description The HI3669 is designed for using in power amplifier applications, power switching application.
Absolute Maximum Ratings (TA=25°C) TO-251 • Maximum Temperatures Tstg Storage Temperature.
-55 ~ +150 °C Tj Junction Temperature .
.
.
+150 °C • Maximum Power Dissipation Total Power Dissi...


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