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HSD669AT

HI-SINCERITY
Part Number HSD669AT
Manufacturer HI-SINCERITY
Description NPN Transistor
Published Apr 30, 2019
Detailed Description HI-SINCERITY MICROELECTRONICS CORP. HSD669AT NPN Epitaxial Planar Transistor Spec. No. : H200901 Issued Date : 2009.02....
Datasheet PDF File HSD669AT PDF File

HSD669AT
HSD669AT

Overview
HI-SINCERITY MICROELECTRONICS CORP.
HSD669AT NPN Epitaxial Planar Transistor Spec.
No.
: H200901 Issued Date : 2009.
02.
20 Revised Date : Page No.
: 1/4 Description Low frequency power amplifier complementary pair with HSB649A TO-126 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature .
.
-55 ~ +150 °C Junction Temperature .
.
.
.
+150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .
.
1 W Total Power Dissipation (TC=25°C) .
.
.
...


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