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IS35ML04G084

ISSI
Part Number IS35ML04G084
Manufacturer ISSI
Description 4Gb(x8) 3.3V NAND FLASH MEMORY
Published Apr 30, 2019
Detailed Description IS34ML04G084 IS35ML04G084 4Gb SLC-4b ECC 3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35ML04G084 4Gb (x8) 3.3...
Datasheet PDF File IS35ML04G084 PDF File

IS35ML04G084
IS35ML04G084

Overview
IS34ML04G084 IS35ML04G084 4Gb SLC-4b ECC 3.
3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35ML04G084 4Gb (x8) 3.
3V NAND FLASH MEMORY with 4b ECC FEATURES  Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - Random Read: 25us (Max.
) - Serial Access: 25ns (Max.
) - Write Performance - Program time: 300us - typical - Block Erase time: 3ms – typical  Low Power with Wide Temp.
Ranges - Single 3.
3V (2.
7V to 3.
6V) Voltage Supply - 10 mA Active Read Current - 8 µA Standb...


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