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IS67WVE4M16TBLL

Part Number	IS67WVE4M16TBLL
Manufacturer	ISSI
Description	64Mb Async/Page PSRAM
Published	Apr 30, 2019
Detailed Description	IS66/67WVE4M16EALL/BLL/CLL IS66/67WVE4M16TALL/BLL/CLL 64Mb Async/Page PSRAM AUGUST 2018 Overview The IS66/67WVE4M16EA...
Datasheet	IS67WVE4M16TBLL PDF File

Overview

IS66/67WVE4M16EALL/BLL/CLL IS66/67WVE4M16TALL/BLL/CLL 64Mb Async/Page PSRAM AUGUST 2018 Overview The IS66/67WVE4M16EALL/BLL/CLL and IS66/67WVE4M16TALL/BLL/CLL integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits.
The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode.
Both these modes reduce standby current drain.
The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.
Features  Asynchronous and page mode interface  Dual voltage rails for optional performance  ALL: VDD 1.
7V~1.
95V, VDDQ 1.
7V~1.
95V  BLL: VDD 2.
7V~3.
6V, VDDQ 2.
7V~3.
6V  CLL: VDD 1.
7V~1.
95V, VDDQ 2.
7V~3.
6V  Page mode read access  Interpage Read access : 60ns, 70ns  Intrapage Read access : 25ns  Low Power Consumption  Asynchronous Operation < 30 ...

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IS67WVE4M16TBLL 64Mb Async/Page PSRAM - ISSI

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