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PXAC241002FC

Part Number	PXAC241002FC
Manufacturer	Wolfspeed
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	May 1, 2019
Detailed Description	PXAC241002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 – 2400 MHz Description The PXAC241002FC is a ...
Datasheet	PXAC241002FC PDF File

Overview

PXAC241002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 – 2400 MHz Description The PXAC241002FC is a 100-watt LDMOS FET with an asymmetric design, intended for use in multi-stantdard cellular power ampliﬁer applications in the 2300 to 2400 MHz frequency band.
Features include dual-path design, input and output matching, high gain and a thermally-enhanced package with earless ﬂange.
Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Single-carrier WCDMA Drive-up VDD = 28 V, IDQ(main) = 230 mA, VGS(peak) = 1.
5 V, ƒ = 2400 MHz 24 eqrpgjgofqq1h40gpdooBr53ggGPn'APRP,W3.
C84DMMAHzsibgannadl,width 60...

Similar Datasheet

PXAC241002FC Thermally-Enhanced High Power RF LDMOS FET - Wolfspeed

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