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APS11450


Part Number APS11450
Manufacturer Allegro
Title Three-Wire Hall-Effect Switch
Description The APS11450 three-wire planar Hall-effect sensor integrated circuits (ICs) were developed in accordance with ISO 26262:2011 as a hardware safety ...
Features AND BENEFITS
• Functional safety □ Developed in accordance with ISO 26262:2011 to meet ASIL B requirements (pending assessment) □ Integrated background diagnostics for signal path, regulator, Hall plate and bias, overtemperature detection, and nonvolatile memory □ Defined fault state
• Multiple prod...

File Size 1.62MB
Datasheet APS11450 PDF File








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APS-1001-A : 2SA1980 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free -150 mA, -50 V PNP Plastic Encapsulated Transistor FEATURES Low collector saturation voltage: VCE(sat) =-0.3V(Max.) Low output capacitance : Cob=4pF (Typ.) Complements of the 2SC5343 G H TO-92 J CLASSIFICATION OF hFE Product-Rank Range 2SA1980-O 70~140 2SA1980-Y 120~240 2SA1980-G 200~400 2SA1980-L 300~700 K 1 Emitter 2 Collector 3 Base D A B REF. A B C D E F G H J K E C F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector 2 3Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Pa.

APS-1001-R : RoHS 2SC2216 2SC2216 FEATURES Power dissipation TRANSISTOR (NPN) TO—92 PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. BASE 2. EMITTER ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE unless otherwise specified) Test Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Bass-emitter saturation voltage Transition frequency W J E E R T C E L VCE (sat) VBE (sat) Ic= 10 mA .

APS-1002-A : 2SA1980(3CG1980) :。 PNP /SILICON PNP TRANSISTOR Purpose: General small signal amplifier applications. : ,, 2SC5343(3DG5343)。 Features: Low VCE(sat),low output capacitance, complementary pair with 2SC5343(3DG5343). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg -50 -50 -5.0 -150 625 150 -55~150 V V V mA mW ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob NF IC=-100μA IC=-1.0mA IE=-10μA VCB=-50V VEB=-5.0V VCE=-6.0V IC=-100mA VCE=-10V VCB=-10V VCE=-6.0V f=1.0KHz IE=0 IE=0 IB=0 IC=0 IE=0 IC=0 IC=-2.0mA IB=-10mA IC=-1.0mA f=1.0MHz IC=-0.1mA Rg=10KΩ -50 -.

APS-1002-R : 2SC2216(3DG2216) :。 NPN /SILICON NPN TRANSISTOR Purpose: TV final picture IF amplifier applications. :,hFE 。 Features: High gain, good hFE linearity. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC IE PC Tj Tstg 50 45 4.0 50 -50 300 150 -55~150 V V V mA mA mW ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ VCEO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Gpe CC.rbb′ IC=10mA VCB=50V VEB=3.0V VCE=12.5V IC=15mA IC=15mA VCE=12.5V VCB=10V VCB=10V IE=0 IB=0 IE=0 IC=0 IC=12.5mA IB=1.5mA IB=1.5mA IC=12.5mA f=30MHz 45 0.1 0.1 40 140 0.2 1.5 300 0.8 29 2.0 36 25 V μA μA V V MHz pF dB ps VCC=12.5V IE=-12.5mA f=45MHz I.

APS-1003-A : 2SA1980(3CG1980) :。 PNP /SILICON PNP TRANSISTOR Purpose: General small signal amplifier applications. : ,, 2SC5343(3DG5343)。 Features: Low VCE(sat),low output capacitance, complementary pair with 2SC5343(3DG5343). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg -50 -50 -5.0 -150 625 150 -55~150 V V V mA mW ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob NF IC=-100μA IC=-1.0mA IE=-10μA VCB=-50V VEB=-5.0V VCE=-6.0V IC=-100mA VCE=-10V VCB=-10V VCE=-6.0V f=1.0KHz IE=0 IE=0 IB=0 IC=0 IE=0 IC=0 IC=-2.0mA IB=-10mA IC=-1.0mA f=1.0MHz IC=-0.1mA Rg=10KΩ -50 -.

APS-1003-R : 2SC2216(3DG2216) :。 NPN /SILICON NPN TRANSISTOR Purpose: TV final picture IF amplifier applications. :,hFE 。 Features: High gain, good hFE linearity. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC IE PC Tj Tstg 50 45 4.0 50 -50 300 150 -55~150 V V V mA mA mW ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ VCEO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Gpe CC.rbb′ IC=10mA VCB=50V VEB=3.0V VCE=12.5V IC=15mA IC=15mA VCE=12.5V VCB=10V VCB=10V IE=0 IB=0 IE=0 IC=0 IC=12.5mA IB=1.5mA IB=1.5mA IC=12.5mA f=30MHz 45 0.1 0.1 40 140 0.2 1.5 300 0.8 29 2.0 36 25 V μA μA V V MHz pF dB ps VCC=12.5V IE=-12.5mA f=45MHz I.

APS-1004-A : • General small signal amplifier PIN Connection E Features • Low collector saturation voltage : VCE(sat)=-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with 2SC5343 B C B E C TO-92 Ordering Information Type NO. 2SA1980 Marking A1980 Package Code TO-92 Absolute Maximum Ratings Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Electrical Characteristics Characteristic Collector-base breakdown voltage 4953990 5 9 1 021 9 0 5 9 4 5 k 021 h . o z o y . w w w Symbol VCBO VCEO (Ta=25°C) Rating -50 -50 -5 Unit V V V mA mW °C °C.




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