DatasheetsPDF.com

GC2X5MPS12-247

Part Number	GC2X5MPS12-247
Manufacturer	GeneSiC
Description	Silicon Carbide Schottky Diode
Published	May 5, 2019
Detailed Description	GC2X5MPS12-247 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features  High Avalanche (UIS) Capability  Enhanc...
Datasheet	GC2X5MPS12-247 PDF File

Overview

GC2X5MPS12-247 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features  High Avalanche (UIS) Capability  Enhanced Surge Current Capability  Superior Figure of Merit QC/IF  Low Thermal Resistance  175 °C Maximum Operating Temperature  Temperature Independent Switching Behavior  Positive Temperature Coefficient of VF  Extremely Fast Switching Speeds Package Case A A K TO-247-3 VRRM IF (Tc = 135°C) QC = 1200 V = 26 A* = 44 nC* Case A KA Advantages  Low Standby Power Losses  Improved Circuit Efficiency (Lower Overall Cost)  Low Switching Losses  Ease of Paralleling without Thermal Runaway  Smaller Heat Sink Requirements  Low Reverse Recovery Current  Low Device Capaci...

Similar Datasheet

GC2X5MPS12-247 Silicon Carbide Schottky Diode - GeneSiC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)