DatasheetsPDF.com

GB01SLT12-214

GeneSiC
Part Number GB01SLT12-214
Manufacturer GeneSiC
Description Silicon Carbide Schottky Diode
Published May 5, 2019
Detailed Description GB01SLT12-214 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced...
Datasheet PDF File GB01SLT12-214 PDF File

GB01SLT12-214
GB01SLT12-214

Overview
GB01SLT12-214 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of VF • Extremely Fast Switching Speeds Package 1 VRRM IF (Tc = 160°C) QC = 1200 V = 1A = 4 nC 2 DO-214 Advantages • Low Standby Power Losses • Improved Circuit Efficiency (Lower Overall Cost) • Low Switching Losses • Ease of Paralleling without Thermal Runaway • Smaller Heat Sink Requirements • Low Reverse Recovery Current • Low Device Capacitance • Low Reverse Leakage Current Applications • Boost Diode in Power Factor Correction (PFC) • Switched Mode Power Supplies (SMPS) • AC-DC Converters & DC-DC Converters • Freewheeling / Anti-parallel Diode in Inverters • Solar Micro-inverters • LED and HID Lighting • Medic...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)