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GAP3SLT33-220FP

Part Number	GAP3SLT33-220FP
Manufacturer	GeneSiC
Description	Silicon Carbide Schottky Diode
Published	May 5, 2019
Detailed Description	GAP3SLT33-220FP 3300 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhan...
Datasheet	GAP3SLT33-220FP PDF File

Overview

GAP3SLT33-220FP 3300 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of VF • Extremely Fast Switching Speeds Package VRRM IF (Tc ≤ 125°C) QC = 3300 V = 0.
3 A = 3 nC 2 1 TO-220-FP Advantages • Low Standby Power Losses • Improved Circuit Efficiency (Lower Overall Cost) • Low Switching Losses • Ease of Paralleling without Thermal Runaway • Smaller Heat Sink Requirements • Low Reverse Recovery Current • Low Device Capacitance • Low Revers...

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GAP3SLT33-220FP Silicon Carbide Schottky Diode - GeneSiC

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