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GB10MPS17-247

Part Number	GB10MPS17-247
Manufacturer	GeneSiC
Description	Silicon Carbide Schottky Diode
Published	May 6, 2019
Detailed Description	GB10MPS17-247 1700V 10A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capabili...
Datasheet	GB10MPS17-247 PDF File

Overview

GB10MPS17-247 1700V 10A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of VF • Extremely Fast Switching Speeds Package Case K VRRM IF (Tc = 135°C) QC Case K A TO-247-2 A = 1700 V = 24 A = 53 nC Advantages • Low Standby Power Losses • Improved Circuit Efficiency (Lower Overall Cost) • Low Switching Losses • Ease of Paralleling without Thermal Runaway • Smaller Heat Sink Requirements • Low Reverse Recovery Current • Low Device Capacitance • Low Reverse Leakage Current Applications • Boost Diode in Power Factor Correction (PFC) • Switched Mode Power Supply (SMPS) • Uninterruptible Power Supply (UPS) • Motor Drives • Freewheeling / Anti-parallel Diode in Inverters • Solar Inv...

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GB10MPS17-247 Silicon Carbide Schottky Diode - GeneSiC

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