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GC50MPS12-247

GeneSiC
Part Number GC50MPS12-247
Manufacturer GeneSiC
Description Silicon Carbide Schottky Diode
Published May 6, 2019
Detailed Description GC50MPS12-247 1200V 50A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capabili...
Datasheet PDF File GC50MPS12-247 PDF File

GC50MPS12-247
GC50MPS12-247

Overview
GC50MPS12-247 1200V 50A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of VF • Extremely Fast Switching Speeds Package Case K VRRM IF (Tc = 135°C) QC Case K A TO-247-2 A = 1200 V = 70 A = 110 nC Advantages • Low Standby Power Losses • Improved Circuit Efficiency (Lower Overall Cost) • Low Switching Losses • Ease of Paralleling without Thermal Runaway • Smaller Heat Sink Requirements • Low Reverse Recovery Current • Low Device Capacitance • Low Reverse Leakage Current Applications • Boost Diode in Power Factor Correction (PFC) • Switched Mode Power Supply (SMPS) • Uninterruptible Power Supply (UPS) • Motor Drives • Freewheeling / Anti-parallel Diode in Inverters • Solar In...


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