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GB25MPS17-247

GeneSiC
Part Number GB25MPS17-247
Manufacturer GeneSiC
Description Silicon Carbide Schottky Diode
Published May 6, 2019
Detailed Description GB25MPS17-247 1700V 25A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capabili...
Datasheet PDF File GB25MPS17-247 PDF File

GB25MPS17-247
GB25MPS17-247

Overview
GB25MPS17-247 1700V 25A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of VF • Extremely Fast Switching Speeds Package Case VRRM IF (Tc = 135°C) QC Case K A K TO-247-2 A = 1700 V = 43 A = 92 nC Advantages • Low Standby Power Losses • Improved Circuit Efficiency (Lower Overall Cost) • Low Switching Losses • Ease of Paralleling without Thermal Runaway • Smaller Heat Sink Requirements • Low Reverse Recovery Current • Low Device ...


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