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S320JR

GeneSiC
Part Number S320JR
Manufacturer GeneSiC
Description Silicon Standard Recovery Diode
Published May 6, 2019
Detailed Description Silicon Standard Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Not ESD Sensitive N...
Datasheet PDF File S320JR PDF File

S320JR
S320JR

Overview
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Not ESD Sensitive Note: 1.
Standard polarity: Stud is cathode.
2.
Reverse polarity (R): Stud is anode.
3.
Stud is base.
S320J thru S320QR VRRM = 600 V - 1200 V IF = 320 A AC CA Stud Stud (R) DO-9 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S320J (R) S320K (R) S320M (R) S320Q (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.
3 ms 600 420 600 320 4700 -55 to 150 -55 to 150 800 566 800 320 4700 -55 to 150 -55 to 150 1000 707 1000 320 1200 848 1200 320 4700 4700 -55 to 150 -55 to 150 -55 to 150 -55 to 150 Unit V V V A A °C °C Electrical characteristics, at Tj = 25 °C,...


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