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FCU600N65S3R0

Part Number	FCU600N65S3R0
Manufacturer	ON Semiconductor
Description	N-Channel Power MOSFET
Published	May 9, 2019
Detailed Description	FCU600N65S3R0 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 6 A, 600 mW Description SUPERFET III MOSFET is ...
Datasheet	FCU600N65S3R0 PDF File

Overview

FCU600N65S3R0 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 6 A, 600 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.
This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
Features • 700 V @ TJ = 150°C • Typ.
RDS(on) = 493 mW • Ultra Low Gate Charge (Typ.
Qg = 11 nC) • Low Effective Output Capacitance (Typ.
Coss(eff.
) = 127 pF) • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Computing / Display Power Supplies • Telecom / Server Power Supplies • Industrial Power Supplies • Lighting / Charger / Adapter www.
onsemi.
com VDSS 650 V RDS(ON) MAX 600 mW @ 10 V ID MAX 6A D G S N-Channel MOSFET GDS I−PAK (DPAK3 STRAIGHT LEADS) CASE 369AP MARKING DIAGRAM $Y&Z&3&K FCU600 N65S3R0 © Semiconductor Components Industries, LLC, 2017 August, 2019 − Rev.
4 $Y &Z &3 &K FCU600N65S3R0 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
1 Publication Order Number: FCU600N65S3R0/D FCU600N65S3R0 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol Parameter Value Unit VDSS VGSS Drain to Source Voltage Gate to Source Voltage DC AC (f > 1 Hz) 650 V ±30 V ±30 V ID Drain Current Continuous (TC = 25°C) 6 Continuous (TC = 100°C) 3.
8 IDM Drain Current Pulsed (Note 1) 15 EAS Single Pulsed Avalanche Energy (Note 2) 24 IAS Avalanche Current (Note 2) 1.
6 EAR Repetitive Avalanche Energy (Note 1) 0.
54 dv/dt MOSFET dv/dt 100 A A mJ A mJ V...

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FCU600N65S3R0 N-Channel Power MOSFET - ON Semiconductor

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