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MRF101BN

Part Number	MRF101BN
Manufacturer	NXP
Description	RF Power LDMOS Transistors
Published	May 9, 2019
Detailed Description	NXP Semiconductors Technical Data Document Number: MRF101AN Rev. 1, 05/2019 RF Power LDMOS Transistors High Ruggedness...
Datasheet	MRF101BN PDF File

Overview

NXP Semiconductors Technical Data Document Number: MRF101AN Rev.
1, 05/2019 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs MRF101AN MRF101BN These devices are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications.
The devices are extremely rugged and exhibit high performance up to 250 MHz.
Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout Gps D (W) (dB) (%) 13.
56 (1) 27 (2) 40.
68 (3) 50 (4) 81.
36 (5) 87.
5–108 (6,7) 136–174 (7,8) 230 (9) CW CW CW CW CW CW CW Pulse (100 sec, 20% Duty Cycle) 130 CW 125 CW 120 CW 119 CW 130 CW 115 CW 104 CW 115 Pe...

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