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FQA10N60C

Part Number	FQA10N60C
Manufacturer	Fairchild Semiconductor
Description	600V N-Channel MOSFET
Published	May 11, 2019
Detailed Description	FQA10N60C FQA10N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode power field ef...
Datasheet	FQA10N60C PDF File

Overview

FQA10N60C FQA10N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
Features • 10A, 600V, RDS(on) = 0.
73Ω @VGS = 10 V • Low gate charge ( typical 44 nC) • Low Crss ( typical 18 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability G DS TO-3PN FQA Series G! D ! ● ◀▲ ● ● ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) ...

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FQA10N60C 600V N-Channel MOSFET - Fairchild Semiconductor

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