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A3T21H360W23SR6

NXP
Part Number A3T21H360W23SR6
Manufacturer NXP
Description RF Power LDMOS Transistor
Published May 11, 2019
Detailed Description NXP Semiconductors Technical Data Document Number: A3T21H360W23S Rev. 0, 08/2017 RF Power LDMOS Transistor N--Channel ...
Datasheet PDF File A3T21H360W23SR6 PDF File

A3T21H360W23SR6
A3T21H360W23SR6

Overview
NXP Semiconductors Technical Data Document Number: A3T21H360W23S Rev.
0, 08/2017 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 56 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz.
2100 MHz  Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQA = 600 mA, VGSB = 0.
6 Vdc, Pout = 56 W Avg.
, Input Signal PAR = 9.
9 dB @ 0.
01% Probability on CCDF.
Frequency Gps (dB) D Output PAR ACPR (%) (dB) (dBc) 2110 MHz 2140 MHz 2170 MHz 2200 MHz 16.
4 16.
6 16.
7 16.
5 52.
0 51.
7 50.
7 49.
6 7.
7 –29.
3 7.
6 –30.
2 7.
3 –30.
7 7.
2 –31.
1 Features  Advanced high performance in--package Doherty  Designed for wide instantaneous bandwidth applications  Greater negative gate--source voltage range for improved Class C operation  Able to withstand extremely high output VSWR and broadb...


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