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MRF6S9060NR1

Part Number	MRF6S9060NR1
Manufacturer	NXP
Description	RF Power Field Effect Transistors
Published	May 13, 2019
Detailed Description	ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data MRF6S9060NR1 replaced by MRFE6S9060NR1....
Datasheet	MRF6S9060NR1 PDF File

Overview

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data MRF6S9060NR1 replaced by MRFE6S9060NR1.
Refer to Device Migration PCN12895 for more details.
MRF6S9060NBR1 no longer manufactured.
RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
• Typical Single - Carrier N TIDrQaff=ic4C5o0dmesA,8PTohurt o=u1g4h -WCaDttMs AAvPge.
,rfIoSrm- 9a5nCceD@MA8(8P0ilMotH, Sz,ynVcD,DP=ag2i8ngV,...

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