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MRF6S9060MR1

Part Number	MRF6S9060MR1
Manufacturer	NXP
Description	RF Power Field Effect Transistors
Published	May 13, 2019
Detailed Description	ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Replaced by MRF6S9060NR1/NBR1. There ar...
Datasheet	MRF6S9060MR1 PDF File

Overview

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Replaced by MRF6S9060NR1/NBR1.
There are no form, fit or function changes with this part replacement.
N suffix added to part number to indicate transition to lead - free terminations.
RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
• Typical Single - Carrier N TIDrQaff=ic4C50odmeAs ,8PTohutro=u1g4h -WCaDttMs AAvPge.
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