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NDB16P

Insignis
Part Number NDB16P
Manufacturer Insignis
Description 1Gb (x16) - DDR2 Synchronous DRAM
Published May 17, 2019
Detailed Description 1Gb (x16) – DDR2 Synchronous DRAM 64M x 16 bit DDR2 Synchronous DRAM Overview The NDB16P is a high-speed CMOS Double-D...
Datasheet PDF File NDB16P PDF File

NDB16P
NDB16P

Overview
1Gb (x16) – DDR2 Synchronous DRAM 64M x 16 bit DDR2 Synchronous DRAM Overview The NDB16P is a high-speed CMOS Double-Data-Rate-Two (DDR2), synchronous dynamic random-access memory (SDRAM) containing 1024 Mbits in a 16-bit wide data I/Os.
It is internally configured as an 8-bank DRAM, 8 banks x 8Mb addresses x 16 I/Os.
The device is designed to comply with DDR2 DRAM key features such as posted CAS# with additive latency, Write latency = Read latency -1, Off-Chip Driver (OCD) impedance adjustment, and On Die Termination (ODT).
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks.
Inputs are latched at the cross point of differential clocks (CK rising and CK# falling).
All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS#) in a source synchronous fashion.
The address bus is used to convey row, column, and bank address information in RAS #, CAS# multiplexing style.
Accesses begin with the registration of a...


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