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MRF21060LSR3

NXP
Part Number MRF21060LSR3
Manufacturer NXP
Description RF Power Field Effect Transistors
Published May 18, 2019
Detailed Description ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - C...
Datasheet PDF File MRF21060LSR3 PDF File

MRF21060LSR3
MRF21060LSR3

Overview
ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz.
Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications.
• Typical 2 - Carrier W PMoHutz,=P6AWR a=tt8s.
A5 vdgB.
, - CFuDlMl FArePqeurefonrcmyaBnacned:,VCDhDa=nn2e8l @ 0.
01% Probability on CCDF.
VBoalntsd,wIDidQth==530.
084mA, Power Gain — 12.
5 dB Drain Efficiency — 15% ACPR @ 5 MHz Offset — - 47 dBc in 3.
84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW Output Power Feature...


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