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MRF18060BLSR3

NXP
Part Number MRF18060BLSR3
Manufacturer NXP
Description RF Power Field Effect Transistor
Published May 18, 2019
Detailed Description Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs D...
Datasheet PDF File MRF18060BLSR3 PDF File

MRF18060BLSR3
MRF18060BLSR3

Overview
Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
Specified for GSM 1930 - 1990 MHz.
• GSM Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain — 13 dB (Typ) @ 60 Watts CW Efficiency — 45% (Typ) @ 60 Watts CW • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 60 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Available with Low Gold Plating Thickness on Leads.
L Suffix Indicates 40μ″ Nominal.
• RoHS Compliant • In Tape and Reel.
R3 Suffix = 250 Units per 56 mm, 13 Inch ...


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