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PZT987A

SeCoS
Part Number PZT987A
Manufacturer SeCoS
Description PNP Silicon Planar Medium Power High Gain Transistor
Published May 20, 2019
Detailed Description Elektronische Bauelemente Description The PZT987A is designed for battery powered circuits and fast charge converters. ...
Datasheet PDF File PZT987A PDF File

PZT987A
PZT987A


Overview
Elektronische Bauelemente Description The PZT987A is designed for battery powered circuits and fast charge converters.
PZT987A PNP Silicon Planar Medium Power High Gain Transistor RoHS Compliant Product SOT-223 Features * Gain Of 200 At Ic=2A And Very Low Saturation Voltage 9 8 7A REF.
A C D E I H Millimeter Min.
Max.
6.
70 7.
30 2.
90 3.
10 0.
02 0.
10 0 10 0.
60 0.
80 0.
25 0.
35 REF.
B J 1 2 3 4 5 Millimeter Min.
Max.
13 TYP.
2.
30 REF.
6.
30 6.
70 6.
30 6.
70 3.
30 3.
70 3.
30 3.
70 1.
40 1.
80 MAXIMUM RATINGS* (Tamb =25oC, unless otherwise specified) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) ICM Collector Current (Pulse) Value -25 -25 -5 -3 -6 Units V V V A A PD Total Power Dissipation 2W TJ,Tstg Junction and Storage Temperature -55~+150 CO *The power which can be dissipated assuming the device is mounted in a typical on a P.
C.
B.
with copper equal to 4 square inch min.
.
ELECTRICAL CHARAC...



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