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SSM3K361TU

Toshiba
Part Number SSM3K361TU
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published May 20, 2019
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS�-H) SSM3K361TU 1. Applications • Power Management Switches • DC-DC Converters 2. Fe...
Datasheet PDF File SSM3K361TU PDF File

SSM3K361TU
SSM3K361TU

Overview
MOSFETs Silicon N-channel MOS (U-MOS�-H) SSM3K361TU 1.
Applications • Power Management Switches • DC-DC Converters 2.
Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 � MOSFET (3) 4.
5 V drive (4) Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ.
) (@VGS = 4.
5 V) RDS(ON) = 51 mΩ (typ.
) (@VGS = 10 V) 3.
Packaging and Pin Assignment SSM3K361TU 1: Gate 2: Source 3: Drain UFM 4.
Orderable part number Orderable part number AEC-Q101 SSM3K361TU,LF SSM3K361TU,LXGF SSM3K361TU,LXHF � YES YES Note 1: For detail information, please contact our sales.
(Note 1) Note General Use Unintended Use Automotive Use (Note 1) ©2016-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2016-12 2022-04-19 Rev.
9.
0 SSM3K361TU 5.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 100 V VGSS ±20 Drain current (DC) (Note 1) ID 3.
5 A Drain current (pulsed) (Note 1), (Note 2) IDP 14 Power dissipation (Note 3) PD 1.
0 W Power dissipation (t = 10 s) (Note 3) PD 1.
8 Single-pulse avalanche energy (Note 4) EAS 9.
1 mJ Avalanche current Channel temperature IAR (Note 5) Tch 3.
5 A 175 � Storage temperature (Note 5) Tstg -55 to 175 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exce...


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