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SSM6K341NU

Toshiba
Part Number SSM6K341NU
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published May 20, 2019
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS-H) SSM6K341NU 1. Applications • Power Management Switches • DC-DC Converters 2. Fe...
Datasheet PDF File SSM6K341NU PDF File

SSM6K341NU
SSM6K341NU

Overview
MOSFETs Silicon N-channel MOS (U-MOS-H) SSM6K341NU 1.
Applications • Power Management Switches • DC-DC Converters 2.
Features (1) 4.
0 V drive (2) Low drain-source on-resistance : RDS(ON) = 28 mΩ (typ.
) (@VGS = 10 V) RDS(ON) = 36 mΩ (typ.
) (@VGS = 4.
5 V) RDS(ON) = 43 mΩ (typ.
) (@VGS = 4 V) 3.
Packaging and Pin Assignment UDFN6B SSM6K341NU 1, 2, 5, 6: Drain 3: Gate 4: Source ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-12 2020-01-07 Rev.
7.
0 SSM6K341NU 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 6 A Drain current (pulsed) (Note 1), (Note 2) IDP 24 Power dissipation (Note 3) PD 1.
25 W Power dissipation (t = 10 s) (Note 3) PD 2.
5 Single-pulse avalanche energy (Note 4) EAS 28.
9 mJ Avalanche current IAR 6 A Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: pulse width ≤ 1 ms, Duty ≤ 1 % Note 3: Device mounted on a 25.
4 mm × 25.
4 mm × 1.
6 mm FR4 glass epoxy board (Cu pad: 645 mm2) Note 4: VDD = 25 V, Tch = 25  (Initial state), L = 1 mH, RG = 25 Ω Note: Note: Note: This transistor is sensitive to electrostatic discharge and should be ha...


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