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FFSP20120A

ON Semiconductor
Part Number FFSP20120A
Manufacturer ON Semiconductor
Description Silicon Carbide Schottky Diode
Published May 28, 2019
Detailed Description Silicon Carbide Schottky Diode 1200 V, 20 A FFSP20120A Description Silicon Carbide (SiC) Schottky Diodes use a completel...
Datasheet PDF File FFSP20120A PDF File

FFSP20120A
FFSP20120A

Overview
Silicon Carbide Schottky Diode 1200 V, 20 A FFSP20120A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.
No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features • Max Junction Temperature 175°C • Avalanche Rated 200 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery/No Forward Recovery • This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits www.
onsemi.
com 1.
Cathode 2.
Anode Schottky Diode 1 2 TO−220−2LD CASE 340BB MARKING DIAGRAM $Y&Z&3&K FFSP 15120A © Semiconductor Components Industries, LLC, 2016 January, 2020 − Rev.
3 $Y &Z &3 &K FFSP15120A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
1 Publication Order Number: FFSP20120A/D FFSP20120A ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Value Unit VRRM Peak Repetitive Reverse Voltage 1200 V EAS Single Pulse Avalanche Energy (Note 1) 200 mJ IF Continuous Rectified Forward Current @ TC < 148°C 20 A IF,Max Non-Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 1190 A TC = 150°C, 10 ms 990 A IF,SM Non-Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.
3 ms 135 A IF,RM Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.
3 ms 74 A PTOT Power Dissipation TC = 25°C 340 W TC = 150°C 57 W TJ, TSTG Operating and Storage Temperature Range −55...


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