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FFSP0865A

ON Semiconductor
Part Number FFSP0865A
Manufacturer ON Semiconductor
Description Silicon Carbide Schottky Diode
Published May 28, 2019
Detailed Description FFSP0865A Silicon Carbide Schottky Diode 650 V, 8 A Description Silicon Carbide (SiC) Schottky Diodes use a completely n...
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FFSP0865A
FFSP0865A

Overview
FFSP0865A Silicon Carbide Schottky Diode 650 V, 8 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.
No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Features • Max Junction Temperature 175°C • Avalanche Rated 49 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling ...


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