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GS816132DGD-xxxV

GSI Technology
Part Number GS816132DGD-xxxV
Manufacturer GSI Technology
Description 18Mb Sync Burst SRAMs
Published May 29, 2019
Detailed Description GS8161xxD(GT/D)-xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sy...
Datasheet PDF File GS816132DGD-xxxV PDF File

GS816132DGD-xxxV
GS816132DGD-xxxV

Overview
GS8161xxD(GT/D)-xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 333 MHz–150 MHz 2.
5 V or 3.
3 V VDD 2.
5 V or 3.
3 V I/O Features • IEEE 1149.
1 JTAG-compatible Boundary Scan • 1.
8 V or 2.
5 V core power supply • 1.
8 V or 2.
5 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Internal input resistors on mode pins allow floating mode pins • Byte Write (BW) and/or Global Write (GW) operation • Internal self-timed write cycle • Automatic power-down for portable applications • JEDEC-standard 165-bump BGA package • RoHS-compliant 100-pin TQFP and 165-bump BGA packages available Functional Description Applications The GS8161xxD(GT/D)-xxxV is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter.
Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applicati...


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