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GS8360Z36CQ

GSI Technology
Part Number GS8360Z36CQ
Manufacturer GSI Technology
Description Rad-Hard SRAM
Published May 29, 2019
Detailed Description Preliminary GS81320Z18/36CQ-333M/250M(S/Q/V) GS8680Z18/36CQ-333M/250M(S/Q/V) GS8360Z18/36CQ-333M/250M(S/Q/V) 100-Pin Ce...
Datasheet PDF File GS8360Z36CQ PDF File

GS8360Z36CQ
GS8360Z36CQ

Overview
Preliminary GS81320Z18/36CQ-333M/250M(S/Q/V) GS8680Z18/36CQ-333M/250M(S/Q/V) GS8360Z18/36CQ-333M/250M(S/Q/V) 100-Pin Ceramic QFP Rad-Hard SRAM Military Temp 144Mb/72Mb/36Mb PL/FT Synchronous NBT SRAMs 333 MHz–250 MHz 2.
5 V or 3.
3 V VDD 2.
5 V or 3.
3 V I/O Features • Aerospace-Level Product • NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization; Fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs • 2.
5 V or 3.
3 V +10%/–10% core power supply • 2.
5 V or 3.
3 V I/O supply • User-configurable Pipeline and Flow Through mode • LBO pin for Linear or Interleave Burst mode • Byte write operation (9-bit Bytes) • 3 chip enable signals for easy depth expansion • ZZ Pin for automatic power-down • 100-pin Ceramic QFP package available Radiation Performance • Total Ionizing Dose (TID) > 300krads(Si) • Soft Error Rate (SER) = TBR • Neutrons = TBR • Single Event Latchup Immunity > 80 MeV.
cm2/m...


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