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GS81280E36GT

GSI Technology
Part Number GS81280E36GT
Manufacturer GSI Technology
Description 144Mb Sync Burst SRAMs
Published May 29, 2019
Detailed Description GS81280E18/32/36GT-xxxV 100-Pin TQFP Commercial Temp Industrial Temp 8M x 18, 4M x 32, 4M x 36 144Mb Sync Burst SRAMs ...
Datasheet PDF File GS81280E36GT PDF File

GS81280E36GT
GS81280E36GT



Overview
GS81280E18/32/36GT-xxxV 100-Pin TQFP Commercial Temp Industrial Temp 8M x 18, 4M x 32, 4M x 36 144Mb Sync Burst SRAMs 333 MHz–200 MHz 1.
8 V or 2.
5 V VDD 1.
8 V or 2.
5 V I/O Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • 1.
8 V or 2.
5 V +10%/–10% core power supply • 1.
8 V or 2.
5 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Internal input resistors on mode pins allow floating mode pins • Default to Interleaved Pipeline mode • Byte Write (BW) and/or Global Write (GW) operation • Internal self-timed write cycle • Automatic power-down for portable applications • RoHS-compliant 100-lead TQFP package Functional Description Applications The GS81280E18/32/36GT-xxxV is a 150,994,944-bit high performance synchronous SRAM with a 2-bit burst address counter.
Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds appli...



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