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GS881E18CGD-xxxIV

Part Number	GS881E18CGD-xxxIV
Manufacturer	GSI Technology
Description	9Mb Sync Burst SRAMs
Published	May 29, 2019
Detailed Description	GS881E18/32/36C(T/D)-xxxIV 100-Pin TQFP & 165-bump BGA 512K x 18, 256K x 32, 256K x 36 Industrial Temp 9Mb Sync Burst...
Datasheet	GS881E18CGD-xxxIV PDF File

Overview

GS881E18/32/36C(T/D)-xxxIV 100-Pin TQFP & 165-bump BGA 512K x 18, 256K x 32, 256K x 36 Industrial Temp 9Mb Sync Burst SRAMs 250 MHz–150 MHz 1.
8 V or 2.
5 V VDD 1.
8 V or 2.
5 V I/O Features Linear Burst Order (LBO) input.
The Burst function need not • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation be used.
New addresses can be loaded on every cycle with no degradation of chip performance.
Flow Through/Pipeline Reads • IEEE 1149.
1 JTAG-compatible Boundary Scan The function of the Data Output register can be controlled by • 1.
8 V or 2.
5 V +10%/–10% core power supply the user via the FT mode pin (Pin 14).
Holding the FT mode • 1.
8 V or 2.
5 V I/O supply pin low places the RAM in Flow Through mode, causing • LBO pin for Linear or Interleaved Burst mode output data to bypass the Data Output Register.
Holding FT • Internal input resistors on mode pins allow floating mode pins high places the RAM in Pipeline...

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GS881E18CGD-xxxIV 9Mb Sync Burst SRAMs - GSI Technology

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