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NTHL080N120SC1

ON Semiconductor
Part Number NTHL080N120SC1
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published May 30, 2019
Detailed Description NTHL080N120SC1 MOSFET – Power, N-Channel, Silicon Carbide, TO-247-3L 1200 V, 80 mW Description Silicon Carbide (SiC) MOS...
Datasheet PDF File NTHL080N120SC1 PDF File

NTHL080N120SC1
NTHL080N120SC1

Overview
NTHL080N120SC1 MOSFET – Power, N-Channel, Silicon Carbide, TO-247-3L 1200 V, 80 mW Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon.
In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features • 1200 V @ TJ = 175°C • Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A • High Speed Switching with Low Capacitance • 100% UIL Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Industrial Motor Drive • UPS • Boost Inverter • PV Charger www.
onsemi.
com VDSS 1200 V RDS(ON) TYP 80 mW D ID MAX 44 A G S GD S TO−247 long leads CASE 340CX MARKING DIAGRAM © Semiconductor Components Industries, LLC, 2018 July, 2019− Rev.
3 $Y&Z&3&K NTHL080 N120SC1 $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot NTHL080N120SC1 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
1 Publication Order Number: NTHL080N120SC1/D NTHL080N120SC1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDSmax VGSmax VGSop(DC) Drain−to−Source Voltage Max.
Gate−to−Source Voltage Recommended operation Values of Gate − Source Voltage @ TC < 150°C @ TC < 150°C 1200 −15 / +25 −5 / +20 V V V VGSop(AC) Recommended operation Values of Gate − Source Voltage (f > 1 Hz) @ TC < 150°C −5 / +20 V ID Continuous Drain Current ID(Pulse) Pulse Drain Current VGS = 20 V, TC = 25°C VGS = 20 V, TC = 100°C Pulse width tp limited by Tj max 44 31 136 A A EAS Single Pulse Avalanche Energy (Note 1) 171 mJ Ptot Power Dissipation TC = 25°C 348 W TC = 150°C 58 TJ, TSTG Operating and Storage Junction Temperature Range −55 to +175 °C Stresse...


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