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NVHL080N120SC1

ON Semiconductor
Part Number NVHL080N120SC1
Manufacturer ON Semiconductor
Description N-Channel Silicon Carbide MOSFET
Published May 30, 2019
Detailed Description Silicon Carbide (SiC) MOSFET – 80 mohm, 1200 V, M1, TO-247-3L NVHL080N120SC1 Features • Typ. RDS(on) = 80 mW • Ultra Lo...
Datasheet PDF File NVHL080N120SC1 PDF File

NVHL080N120SC1
NVHL080N120SC1

Overview
Silicon Carbide (SiC) MOSFET – 80 mohm, 1200 V, M1, TO-247-3L NVHL080N120SC1 Features • Typ.
RDS(on) = 80 mW • Ultra Low Gate Charge (typ.
QG(tot) = 56 nC) • Low Effective Output Capacitance (typ.
Coss = 80 pF) • 100% UIL Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • Automotive On Board Charger • Automotive DC−DC converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Recommended Operation Values of Gate−to− Source Voltage TC < 175°C VDSS 1200 V VGS −15/+25 V VGSop −5/+20 V Continuous Drain Current RqJC Steady TC = 25°C ID State Power Dissipation RqJC PD Continuous Drain Current RqJC Steady TC = 100°C ID State Power Dissipation RqJC PD Pulsed Drain Current (Note 2) TA = 25°C IDM 31 A 178 W 22 A 89 W 132 A Single Pulse Surge Drain TA = 25°C, tp = 10 ms, IDSC Current Capability RG = 4.
7 W 132 A Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C +175 Source Current (Body Diode) IS 18 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 18.
5 A, L = 1 mH) (Note 3) EAS 171 mJ Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Note 1) RqJC 0.
84 °C/W Junction−to−Ambient (Note 1) RqJA 40 °C/W 1.
The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2.
Repetitive rating, limited by max junction temperature.
3.
EAS of 171 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 18.
5 A, VDD = 120 V, VGS = 18 V.
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