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V1PM12

Vishay
Part Number V1PM12
Manufacturer Vishay
Description Surface Mount Trench MOS Barrier Schottky Rectifier
Published Jun 4, 2019
Detailed Description www.vishay.com V1PM12 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® eSMP® Se...
Datasheet PDF File V1PM12 PDF File

V1PM12
V1PM12

Overview
www.
vishay.
com V1PM12 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® eSMP® Series Top View Bottom View MicroSMP (DO-219AD) Anode Cathode DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 1.
0 A 120 V 25 A VF at IF = 1.
0 A (125 °C) 0.
61 V TJ max.
Package 175 °C MicroSMP (DO-219AD) Circuit configuration Single FEATURES • Very low profile - typical height of 0.
65 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop • Low power loss, high efficiency • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qual...


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