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PSMN4R3-100ES

nexperia
Part Number PSMN4R3-100ES
Manufacturer nexperia
Description N-channel MOSFET
Published Jun 4, 2019
Detailed Description PSMN4R3-100ES N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK Rev. 1 — 31 October 2011 Product data sheet 1. P...
Datasheet PDF File PSMN4R3-100ES PDF File

PSMN4R3-100ES
PSMN4R3-100ES

Overview
PSMN4R3-100ES N-channel 100 V 4.
3 mΩ standard level MOSFET in I2PAK Rev.
1 — 31 October 2011 Product data sheet 1.
Product profile 1.
1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C.
This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.
2 Features and benefits  High efficiency due to low switching and conduction losses  Suitable for standard level gate drive sources 1.
3 Applications  DC-to-DC converters  Load switching  Motor control  Server power supplies 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics Conditions Min Typ Max Unit Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V Tmb = 25 °C; VGS = 10 V; see Figure 1 [1] - - 120 A Tmb = 25 °C; see Figure 2 - - 338 W -55 - 175 °C RDSon drain-source on-...


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