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V12P12

Vishay
Part Number V12P12
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published Jun 9, 2019
Detailed Description www.vishay.com V12P12 Vishay General Semiconductor High Current Density Surface-Mount Trench MOS Barrier Schottky Rect...
Datasheet PDF File V12P12 PDF File

V12P12
V12P12

Overview
www.
vishay.
com V12P12 Vishay General Semiconductor High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
51 V at IF = 6 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 FEATURES • Very low profile - typical height of 1.
1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 ADDITIONAL RESOURCES 3D 3D 3D Model...


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