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H05N60F

Part Number	H05N60F
Manufacturer	HI-SINCERITY
Description	N-Channel Power Field Effect Transistor
Published	Jun 16, 2019
Detailed Description	HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200603 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. :...
Datasheet	H05N60F PDF File

Overview

HI-SINCERITY MICROELECTRONICS CORP.
Spec.
No.
: MOS200603 Issued Date : 2006.
02.
01 Revised Date : 2006.
02.
07 Page No.
: 1/5 H05N60 Series N-Channel Power Field Effect Transistor Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits.
Features • Higher Current Rating • Lower RDS(on) • Lower Capacitances • Lower Total Gate Charge • Tighter VSD Specifications • Avalanche Energy Specified Absolute M...

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