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SSM3J65CTC

Toshiba
Part Number SSM3J65CTC
Manufacturer Toshiba
Description Silicon P-Channel MOSFET
Published Jun 22, 2019
Detailed Description MOSFETs Silicon P-Channel MOS SSM3J65CTC 1. Applications • Power Management Switches 2. Features (1) 1.2 V drive (2) Low...
Datasheet PDF File SSM3J65CTC PDF File

SSM3J65CTC
SSM3J65CTC

Overview
MOSFETs Silicon P-Channel MOS SSM3J65CTC 1.
Applications • Power Management Switches 2.
Features (1) 1.
2 V drive (2) Low drain-source on-resistance : RDS(ON) = 1110 mΩ (typ.
) (@VGS = -1.
2 V) RDS(ON) = 780 mΩ (typ.
) (@VGS = -1.
5 V) RDS(ON) = 650 mΩ (typ.
) (@VGS = -1.
8 V) RDS(ON) = 510 mΩ (typ.
) (@VGS = -2.
5 V) RDS(ON) = 400 mΩ (typ.
) (@VGS = -4.
5 V) 3.
Packaging and Pin Assignment SSM3J65CTC CST3C ©2017-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2017-09 2021-03-11 Rev.
4.
0 SSM3J65CTC 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -20 V VGSS ±10 Drain current (DC) (Note 1) ID -700 mA Drain current (pulsed) (Note 1) IDP -1400 Power dissipation Channel temperature (Note 2) PD Tch 500 mW 150 � Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.
g.
the application of high te...


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