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SSM3J340R

Toshiba
Part Number SSM3J340R
Manufacturer Toshiba
Description Silicon P-Channel MOSFET
Published Jun 22, 2019
Detailed Description MOSFETs Silicon P-Channel MOS (U-MOS) SSM3J340R 1. Applications • Power Management Switches 2. Features (1) 4.0-V drive...
Datasheet PDF File SSM3J340R PDF File

SSM3J340R
SSM3J340R

Overview
MOSFETs Silicon P-Channel MOS (U-MOS) SSM3J340R 1.
Applications • Power Management Switches 2.
Features (1) 4.
0-V drive (2) Low drain-source on-resistance : RDS(ON) = 86 mΩ (max) (@VGS = -4.
0 V) RDS(ON) = 73 mΩ (max) (@VGS = -4.
5 V) RDS(ON) = 45 mΩ (max) (@VGS = -10 V) 3.
Packaging and Pin Assignment SOT-23F SSM3J340R 1: Gate 2: Source 3: Drain ©2016-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-03 2019-05-17 Rev.
3.
0 SSM3J340R 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS -30 V Gate-source voltage VGSS -25 / +20 Drain current (DC) (Note 1) ID -4 A Drain current (pulsed) (Note 1), (Note 2) IDP -12 Power dissipation (Note 3) PD 1W Power dissipation t ≤ 10 s (Note 3) PD 2 Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.
g.
the application ...


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