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2N3810DCSM

TT
Part Number 2N3810DCSM
Manufacturer TT
Description SILICON DUAL MATCHED PNP TRANSISTORS
Published Jun 23, 2019
Detailed Description SILICON DUAL MATCHED PNP TRANSISTORS 2N3810DCSM • Matched Dual Transistor. • Dual Ceramic Hermetic Package • Suitable F...
Datasheet PDF File 2N3810DCSM PDF File

2N3810DCSM
2N3810DCSM

Overview
SILICON DUAL MATCHED PNP TRANSISTORS 2N3810DCSM • Matched Dual Transistor.
• Dual Ceramic Hermetic Package • Suitable For High Gain, Low Noise, Differential Amplifier, Applications.
• Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) Each Side Total Device VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Voltage -60V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -50mA PD Total Power Dissipation at TA = 25°C 500mW 600mW(1) Derate Above 25°C 2.
86mW/°C 3.
43mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES (Each Side) Symbols Parameters RθJA...


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