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1N5711CSM

Part Number	1N5711CSM
Manufacturer	TT
Description	SCHOTTKY BARRIER DIODE
Published	Jun 23, 2019
Detailed Description	SCHOTTKY BARRIER DIODE 1N5711CSM • High Breakdown Voltage (VBR = 70V) • Low Forward Voltage • Hermetic Ceramic Surface M...
Datasheet	1N5711CSM PDF File

Overview

SCHOTTKY BARRIER DIODE 1N5711CSM • High Breakdown Voltage (VBR = 70V) • Low Forward Voltage • Hermetic Ceramic Surface Mount Package • Suitable for Low Current, Fast Switching Applications.
• Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VBR Breakdown Voltage 70V VRRM Repetitive Peak Reverse Voltage 70V IF Forward Current 15mA PD Total Power Dissipation at TA = 25°C 250mW Derate Above 25°C 2.
5mW/°C TJ Junction Temperature Range -55 to +125°C Tstg Storage Temperature Range -65 to +150°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Max.
400 Units °C/W Semelab Limited reserves the right to ch...

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